Ferroelectricity in intergrowth Bi3TiNbO9–Bi4Ti3O12 ceramics
نویسندگان
چکیده
Monophase intergrowth Bi3TiNbO9–Bi4Ti3O12 BTN-BIT ceramics were synthesized by solid-state reaction method. In the temperature dependence of dielectric permittivity, two anomalies appeared at 945 and 1114 K, respectively. The ferroelectric hysteresis loop measurement revealed that the 2Pr is 20 C/cm 2, nearly as twice as that of the BTN ceramic. The crystal structure analysis indicated that the enhanced octahedral distortion along the a axis is the main contribution to the ferroelectricity of BTN-BIT. The increased 2Pr for the BTN-BIT ceramics is ascribed to its larger Ps than that of the BTN and easier domain switching under electric field than that of the BIT. © 2006 American Institute of Physics. DOI: 10.1063/1.2199751
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